Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
From inside the book
Results 1-3 of 17
Page 52
... etch rates as a function of film thickness for a methyl siloxane polymer after a full e - beam cure , variable energy e - beam cure , and depth - controlled e - beam cure . The full e - beam curing process results in a constant wet etching ...
... etch rates as a function of film thickness for a methyl siloxane polymer after a full e - beam cure , variable energy e - beam cure , and depth - controlled e - beam cure . The full e - beam curing process results in a constant wet etching ...
Page 249
Etch rate ( nm / min ) concentration of atomic oxygen [ 6 ] . In a pure oxygen plasma SILK etches two times faster than BCB . In a NF , plasma afterglow the etch rates of both polymers are not observable . Ellipsometric characterisation ...
Etch rate ( nm / min ) concentration of atomic oxygen [ 6 ] . In a pure oxygen plasma SILK etches two times faster than BCB . In a NF , plasma afterglow the etch rates of both polymers are not observable . Ellipsometric characterisation ...
Page 250
... etch processes for organic polymers have been reported in literature . These ... rate ( nm / min ) 1200 SILK 1000 BCB 800 600 400 200 P9601 1/84 0 0 20 40 60 ... etch cleaning ) D18 WD10 b CA / P960498 / 11 Fig.6 . The RIE profiles of BCB ...
... etch processes for organic polymers have been reported in literature . These ... rate ( nm / min ) 1200 SILK 1000 BCB 800 600 400 200 P9601 1/84 0 0 20 40 60 ... etch cleaning ) D18 WD10 b CA / P960498 / 11 Fig.6 . The RIE profiles of BCB ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
41 other sections not shown
Other editions - View all
Common terms and phrases
1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films