Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 118
... field , & and ε are the dielectric constant of the void and insulator , respectively . The applied electric field E induces a dipole moment per unit length p = PE E , where PE = ( E2 - ε , ) / ( ε2 + ε , ) / 2л , is the cylinder ...
... field , & and ε are the dielectric constant of the void and insulator , respectively . The applied electric field E induces a dipole moment per unit length p = PE E , where PE = ( E2 - ε , ) / ( ε2 + ε , ) / 2л , is the cylinder ...
Page 121
... field parallel to the channels ( perpendicular to the face of the GCA ) , then with the electric field perpendicular to the channels . From the change of the resonant frequency of the cavity , and the change in Q , one can calculate the ...
... field parallel to the channels ( perpendicular to the face of the GCA ) , then with the electric field perpendicular to the channels . From the change of the resonant frequency of the cavity , and the change in Q , one can calculate the ...
Page 230
... field in this structure at the test voltage is 0.5x10 V / cm , and the area of the wire to wire ( lateral ) capacitor is 3x10-2 cm2 . Estimated leakage current through an MOS dot structure with this area , at this field would be less ...
... field in this structure at the test voltage is 0.5x10 V / cm , and the area of the wire to wire ( lateral ) capacitor is 3x10-2 cm2 . Estimated leakage current through an MOS dot structure with this area , at this field would be less ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines Microelectronics modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films