Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 292
... formed on the 500 - nm - thick sputtered Cu . After a - C : F deposition , the reflection was measured using a UV - 2100 UV - visible recording spectrophotometer . After reflection measurement , annealing was performed in two kinds of ...
... formed on the 500 - nm - thick sputtered Cu . After a - C : F deposition , the reflection was measured using a UV - 2100 UV - visible recording spectrophotometer . After reflection measurement , annealing was performed in two kinds of ...
Page 293
... formed at the lower temperature of 300 ° C , while less copper fluoride was formed at 450 ° C . R. G. Purser et al . also show degradation of the barrier structure of between Cu and amorphous carbon without fluorine after annealing at ...
... formed at the lower temperature of 300 ° C , while less copper fluoride was formed at 450 ° C . R. G. Purser et al . also show degradation of the barrier structure of between Cu and amorphous carbon without fluorine after annealing at ...
Page 297
... formed are compositionally quite different from SiC films formed by , e.g. , e - beam induced reaction of methyl silane [ 2 ] , and therefore might be expected to display different mechanical , chemical and electronic properties ...
... formed are compositionally quite different from SiC films formed by , e.g. , e - beam induced reaction of methyl silane [ 2 ] , and therefore might be expected to display different mechanical , chemical and electronic properties ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films