Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 168
... frequency line at about 800 cm1 correlates with the A1 , vibration of an oxygen octahedron characteristic of all these perovskite- type materials . This is a singlet mode , so we don't expect some changes in this mode even if the ...
... frequency line at about 800 cm1 correlates with the A1 , vibration of an oxygen octahedron characteristic of all these perovskite- type materials . This is a singlet mode , so we don't expect some changes in this mode even if the ...
Page 180
... frequency peak as determined from the difference in the frequencies where the phase is arbitrarily chosen to be ± 45 ° . The use of the piezoelectric quartz crystals has been a well documented method for generating known simple harmonic ...
... frequency peak as determined from the difference in the frequencies where the phase is arbitrarily chosen to be ± 45 ° . The use of the piezoelectric quartz crystals has been a well documented method for generating known simple harmonic ...
Page 181
... frequency resolution ) High Precision Time Interval Counter ( 10-11 frequency resolution ) Measure the Phase Figure 3- The instrumental design employed to measure the viscoelastic properties of thin films . Phase ( rad / sec ) 1.2 0.8 ...
... frequency resolution ) High Precision Time Interval Counter ( 10-11 frequency resolution ) Measure the Phase Figure 3- The instrumental design employed to measure the viscoelastic properties of thin films . Phase ( rad / sec ) 1.2 0.8 ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films