Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 113
... Gap Filling Porous films , of different compositions , were deposited on wafers having an aluminum trace test pattern . Overall gap fill is poor ( figure 9 ) , but improves significantly as the colloidal silica content is increased ...
... Gap Filling Porous films , of different compositions , were deposited on wafers having an aluminum trace test pattern . Overall gap fill is poor ( figure 9 ) , but improves significantly as the colloidal silica content is increased ...
Page 114
... Gap Fill of Aluminum Traces Using 20:80 Porous Silica Thin Film Figure 11 - Gap Fill of Aluminum Traces Using 30:70 Porous Silica Thin Film Electrical Characterization The dielectric properties of the thin films were determined using a ...
... Gap Fill of Aluminum Traces Using 20:80 Porous Silica Thin Film Figure 11 - Gap Fill of Aluminum Traces Using 30:70 Porous Silica Thin Film Electrical Characterization The dielectric properties of the thin films were determined using a ...
Page 206
... fills gaps and planarizes well , its adhesion to the substrate is relatively poor . The gap fill performance of the ILD material must be evaluated and optimized for etched conductor applications . Figures 2a and 2b are examples of the gap ...
... fills gaps and planarizes well , its adhesion to the substrate is relatively poor . The gap fill performance of the ILD material must be evaluated and optimized for etched conductor applications . Figures 2a and 2b are examples of the gap ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films