Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 307
... grain size with twins is revealed by these focused ion beam ( FIB ) micrographs . A little grain growth was observed before and after 400 ° C anneal for 1 hour . Since a near perfect lattice match exists between two grains at the twin ...
... grain size with twins is revealed by these focused ion beam ( FIB ) micrographs . A little grain growth was observed before and after 400 ° C anneal for 1 hour . Since a near perfect lattice match exists between two grains at the twin ...
Page 357
... grain ( not shown ) . The presence of elongated sidewall voids for PAE- passivated lines indicates that the role of ... grain growth which can be an important factor contributing to the longer lifetime of the PAE samples . Transmission ...
... grain ( not shown ) . The presence of elongated sidewall voids for PAE- passivated lines indicates that the role of ... grain growth which can be an important factor contributing to the longer lifetime of the PAE samples . Transmission ...
Page 358
... grain texture . In this study , electron backscatter diffraction ( EBSD ) methods were used to characterize grain texture of the Al ( Cu ) lines . Grain texture of PAE - passivated Al ( Cu ) lines is more exactly ( 111 ) oriented as ...
... grain texture . In this study , electron backscatter diffraction ( EBSD ) methods were used to characterize grain texture of the Al ( Cu ) lines . Grain texture of PAE - passivated Al ( Cu ) lines is more exactly ( 111 ) oriented as ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines Microelectronics modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films