Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 83
... groups from CF3 - C and HF elimination from CF2H- groups . CH2F2 film shows loss through HF elimination from -CFH- groups . of substitution on the carbon . The presence of CF2H- groups supports the FTIR observations and its loss is most ...
... groups from CF3 - C and HF elimination from CF2H- groups . CH2F2 film shows loss through HF elimination from -CFH- groups . of substitution on the carbon . The presence of CF2H- groups supports the FTIR observations and its loss is most ...
Page 236
... group at the expense of some fluorocarbon single bond ( C - C , sp3 ) groups , -CF 、( x = 1 , 2 , 3 ) . The reduction of the ( C - C , sp3 ) group is accompanied by the loss of fluorine atoms and then the decrease of CF , fragments ...
... group at the expense of some fluorocarbon single bond ( C - C , sp3 ) groups , -CF 、( x = 1 , 2 , 3 ) . The reduction of the ( C - C , sp3 ) group is accompanied by the loss of fluorine atoms and then the decrease of CF , fragments ...
Page 371
... groups that are back - bonded to the Si atom of that Si - F group [ 1 ] . Our ab initio calculations provide a theoretical framework for understanding why relatively small additions of F atoms to SiO2 , ~ 10 - 12 at . % , produce ...
... groups that are back - bonded to the Si atom of that Si - F group [ 1 ] . Our ab initio calculations provide a theoretical framework for understanding why relatively small additions of F atoms to SiO2 , ~ 10 - 12 at . % , produce ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films