Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 228
... hard mask that also provides chemical - mechanical etch selectivity during the Cu CMP process . By using photoresist of approximately the same thickness as the DLC film , transferring the pattern to the hard mask with a fluorine based ...
... hard mask that also provides chemical - mechanical etch selectivity during the Cu CMP process . By using photoresist of approximately the same thickness as the DLC film , transferring the pattern to the hard mask with a fluorine based ...
Page 261
... hard - mask might result in the delamination . exposed to a chemically reducing plasma , using either an hydrogen or ... hard. Results and Discussion PECVD FIAC Cap Proc . anneal delam . Hard mask anneal α - C Std . SiO2 pass fail TT α ...
... hard - mask might result in the delamination . exposed to a chemically reducing plasma , using either an hydrogen or ... hard. Results and Discussion PECVD FIAC Cap Proc . anneal delam . Hard mask anneal α - C Std . SiO2 pass fail TT α ...
Page 264
... hard - mask stacks at 400 ° C were deposited . Films were deposited in the sequence : HDP - FLAC stack / hard mask dep./repeat . Using amorphous silicon carbide ( 2000 Å , deposited in - situ with HDP - FIAC stack ) or PECVD SiN ...
... hard - mask stacks at 400 ° C were deposited . Films were deposited in the sequence : HDP - FLAC stack / hard mask dep./repeat . Using amorphous silicon carbide ( 2000 Å , deposited in - situ with HDP - FIAC stack ) or PECVD SiN ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films