Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 157
... hardness , Young's modulus , the onset of cracking with curing temperature . This dependence on curing temperature is also expressed by the change in Si - H bond density as shown by FTIR data . Life expectancy or aging characteristics ...
... hardness , Young's modulus , the onset of cracking with curing temperature . This dependence on curing temperature is also expressed by the change in Si - H bond density as shown by FTIR data . Life expectancy or aging characteristics ...
Page 158
... hardness and moduli values comparable to results published elsewhere [ 2,3 ] . In the FTIR study Nicolet 510P FT - IR spectrometer was used . Si - H absorbance were measured on 340nm thick films at 2255 cm - 1 . RESULTS The mechanical ...
... hardness and moduli values comparable to results published elsewhere [ 2,3 ] . In the FTIR study Nicolet 510P FT - IR spectrometer was used . Si - H absorbance were measured on 340nm thick films at 2255 cm - 1 . RESULTS The mechanical ...
Page 163
DISCUSSION The determination of the hardness of the 340nm thick films poses a problem , because at the small indentation depths , ( < 100nm ) , the tip correction is less reliable . The data on the hardness of the thin and thick films ...
DISCUSSION The determination of the hardness of the 340nm thick films poses a problem , because at the small indentation depths , ( < 100nm ) , the tip correction is less reliable . The data on the hardness of the thin and thick films ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films