Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 3
... higher resistance ( R ) of narrower metal leads and higher capacitance ( C ) between more tightly spaced interconnects . In addition , reduced interconnect cross - sectional area may also lead to higher current densities which ...
... higher resistance ( R ) of narrower metal leads and higher capacitance ( C ) between more tightly spaced interconnects . In addition , reduced interconnect cross - sectional area may also lead to higher current densities which ...
Page 141
... higher due to contributions from atomic polarization . However , this relation is most accurate for carbon , hydrogen , and fluorine containing polymers due to their low atomic polarizability . All the CVD polymers studied here have the ...
... higher due to contributions from atomic polarization . However , this relation is most accurate for carbon , hydrogen , and fluorine containing polymers due to their low atomic polarizability . All the CVD polymers studied here have the ...
Page 291
... higher than that of the SiO2 ILD , electrical isolation is acceptable at < 20 V when annealing is carried out at 350 ° C in a vacuum . INTRODUCTION The basic multilevel interconnect technology consists of multilevel metallization and ...
... higher than that of the SiO2 ILD , electrical isolation is acceptable at < 20 V when annealing is carried out at 350 ° C in a vacuum . INTRODUCTION The basic multilevel interconnect technology consists of multilevel metallization and ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films