Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 130
... Hydrogen Atoms / Total Atoms Figure 7. Hydrogen depth profile of polynapthalene film Figure 8 shows the hydrogen depth profile in a 5000 A thick porous silicon dioxide film . These films are passivated with -CH3 groups . This process ...
... Hydrogen Atoms / Total Atoms Figure 7. Hydrogen depth profile of polynapthalene film Figure 8 shows the hydrogen depth profile in a 5000 A thick porous silicon dioxide film . These films are passivated with -CH3 groups . This process ...
Page 257
.Hydrogen - Silsesquioxane File 300 .Not Etched 250 2001 Intensity / Counts per second 1000 : 50 .0 1s 100 .0 Auger ( KLL ) 50 .Si 2p Si 2s .C is at 1100 1050 1000 950 900 850 800 750 700 850 600 $ 50 Binding Energy / ev 500 450 400 350 ...
.Hydrogen - Silsesquioxane File 300 .Not Etched 250 2001 Intensity / Counts per second 1000 : 50 .0 1s 100 .0 Auger ( KLL ) 50 .Si 2p Si 2s .C is at 1100 1050 1000 950 900 850 800 750 700 850 600 $ 50 Binding Energy / ev 500 450 400 350 ...
Page 368
... hydrogen in the interior of the CF , film , indicating that the water existed only on the surface of the film . The hydrogen concentration at the surface in Fig . 4 was almost the same in the two samples . However the surface hydrogen ...
... hydrogen in the interior of the CF , film , indicating that the water existed only on the surface of the film . The hydrogen concentration at the surface in Fig . 4 was almost the same in the two samples . However the surface hydrogen ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films