Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 27
... improved to 2.6 , more than 102cm and more than 3MV / cm , respectively , after 300 ° C vacuum annealing . INTRODUCTION It is well recognized that the product of the interconnection line resistance and the line capacitance is becoming ...
... improved to 2.6 , more than 102cm and more than 3MV / cm , respectively , after 300 ° C vacuum annealing . INTRODUCTION It is well recognized that the product of the interconnection line resistance and the line capacitance is becoming ...
Page 93
... improvements in the thermal stability of these materials . Most importantly , this enhanced thermal stability is ... improved thermal stability . The present study focuses on the pulsed plasma polymerization of pentafluorostyrene ...
... improvements in the thermal stability of these materials . Most importantly , this enhanced thermal stability is ... improved thermal stability . The present study focuses on the pulsed plasma polymerization of pentafluorostyrene ...
Page 97
... improvements in the thermal stabilities of these films were observed after the curing process . An example of this improved thermal stability is shown in Figure 5 , in which TGA analysis of an as deposited and an film cured at 400 ° C ...
... improvements in the thermal stabilities of these films were observed after the curing process . An example of this improved thermal stability is shown in Figure 5 , in which TGA analysis of an as deposited and an film cured at 400 ° C ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films