Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 3
... of the present investigation was to determine the magnitude of these geometric effects that could be encountered in plane strain fracture toughness tests on a commonly used high - strength steel . Systematic tests were made to determine ...
... of the present investigation was to determine the magnitude of these geometric effects that could be encountered in plane strain fracture toughness tests on a commonly used high - strength steel . Systematic tests were made to determine ...
Page 66
P\/ a versus v would have to be identical in the range of small crack extension if K\a is to be independent of the initial crack length. This would require A (a/W) to be independent of the initial crack length. This behavior is most ...
P\/ a versus v would have to be identical in the range of small crack extension if K\a is to be independent of the initial crack length. This would require A (a/W) to be independent of the initial crack length. This behavior is most ...
Page 109
... of the sort requested in Problem 6.6 . However , no direction path exists for the set of ten points in the first part of Figure 3.5 . Each line L in the plane separates the plane into two open half - planes Land L + . Let us say that a ...
... of the sort requested in Problem 6.6 . However , no direction path exists for the set of ten points in the first part of Figure 3.5 . Each line L in the plane separates the plane into two open half - planes Land L + . Let us say that a ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films