Materials Research Society Symposia Proceedings, Volume 511 |
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Page 60
In the figure, after 1 st annealing, the increase in tensile stress is due to the
formation of additional Si-O-Si bonds via the dehydration reaction between
originally existing neighboring Si-OH's. 6 Physical desorption of water is also
possible to ...
In the figure, after 1 st annealing, the increase in tensile stress is due to the
formation of additional Si-O-Si bonds via the dehydration reaction between
originally existing neighboring Si-OH's. 6 Physical desorption of water is also
possible to ...
Page 78
Hydrogen has been shown to increase fluorocarbon deposition rates by
scavenging fluorine atoms to form HF 9,29 This reaction reduces the etching of
the. growing fluorocarbon film by fluorine atoms, pushing the plasma further
toward the ...
Hydrogen has been shown to increase fluorocarbon deposition rates by
scavenging fluorine atoms to form HF 9,29 This reaction reduces the etching of
the. growing fluorocarbon film by fluorine atoms, pushing the plasma further
toward the ...
Page 186
The permittivity increases linearly (R2 greater than 0.98) for compressive
stresses greater than 2.5 MPa, with a slope of 0.51 ± 0.06 GPa" averaged over
two samples. The data shown in Figure 3 was obtained from one of the samples
over ...
The permittivity increases linearly (R2 greater than 0.98) for compressive
stresses greater than 2.5 MPa, with a slope of 0.51 ± 0.06 GPa" averaged over
two samples. The data shown in Figure 3 was obtained from one of the samples
over ...
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Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
42 other sections not shown
Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1998 Materials Research a-C:F films a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition coefficient concentration copper curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate F1AC film thickness fluorine fluorocarbon FTIR function hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k lower Materials Research Society measured mechanical metal lines Microelectronics modulus moisture molecular nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silicon oxide silsesquioxane spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel
Bibliographic information
| Title | Materials Research Society Symposia Proceedings, Volume 511 Materials Research Society Symposia Proceedings, Materials Research Society Symposia Proceedings |
| Author | Chien Chiang |
| Contributor | Materials Research Society |
| Publisher | North Holland, 1998 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| Export Citation | BiBTeX EndNote RefMan |