Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 60
In the figure , after 1st annealing , the increase in tensile stress is due to the
formation of additional Si - O - Si bonds via the dehydration reaction between
originally existing neighboring Si - OH ' s . Physical desorption of water is also
possible ...
In the figure , after 1st annealing , the increase in tensile stress is due to the
formation of additional Si - O - Si bonds via the dehydration reaction between
originally existing neighboring Si - OH ' s . Physical desorption of water is also
possible ...
Page 175
400 Fused Silica 0 - 6 Crack Velocity , v ( m s * ' ) 460 , 400 0 450 460 1E - 8
Increasing Curing Time or Temperature 1E ... times and greater curing
temperatures lead to films with increased crack driving forces but decreased
crack velocities .
400 Fused Silica 0 - 6 Crack Velocity , v ( m s * ' ) 460 , 400 0 450 460 1E - 8
Increasing Curing Time or Temperature 1E ... times and greater curing
temperatures lead to films with increased crack driving forces but decreased
crack velocities .
Page 186
The permittivity increases linearly ( R ' greater than 0 . ... The capacitance
increase detected by the electrodes was not very large and ... Hence , the
increase in capacitance was only due to an increase in dielectric permittivity of
the polymer .
The permittivity increases linearly ( R ' greater than 0 . ... The capacitance
increase detected by the electrodes was not very large and ... Hence , the
increase in capacitance was only due to an increase in dielectric permittivity of
the polymer .
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Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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adhesion annealing applications atoms bonds calculated capacitance carbon cause characteristics chemical compared concentration copper crack curing decrease density dependence deposition depth determined developed devices dielectric constant diffusion e-beam effect electrical electron energy etch Figure fluorine frequency function glass heating higher hydrogen increase indicate integration interconnect interface layer less lines load low-k lower materials measured mechanical metal moisture observed obtained organic oxide oxygen peak performance plasma polished polyimide polymer polymerization porosity porous precursors present Proc properties pulse range ratio reaction reduced relative removal Research resistance samples shown in Figure shows silica silicon SiO2 spectra stability strength stress structure substrate surface Symp Table technique temperature thermal thickness thin films treatment values Volume wafer wiring xerogel