Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 60
... increase in σ after 1st annealing can be well explained by the dehydration reaction , it is hard to explain the increase in σ after 2nd annealing because the originally existing neighboring Si - OH's should react and be consumed in the ...
... increase in σ after 1st annealing can be well explained by the dehydration reaction , it is hard to explain the increase in σ after 2nd annealing because the originally existing neighboring Si - OH's should react and be consumed in the ...
Page 175
... increases such that , although the residual strain decreases [ 3 ] , the increased modulus causes the residual elastic energy in the film to increase . This effect is shown by the gradual movement of the data with increased curing time ...
... increases such that , although the residual strain decreases [ 3 ] , the increased modulus causes the residual elastic energy in the film to increase . This effect is shown by the gradual movement of the data with increased curing time ...
Page 186
... increase in capacitance was only due to an increase in dielectric permittivity of the polymer . Below 2.5 MPa , the permittivity change was not linear but dependent on the initial state of stress in the polymer . The increase in ...
... increase in capacitance was only due to an increase in dielectric permittivity of the polymer . Below 2.5 MPa , the permittivity change was not linear but dependent on the initial state of stress in the polymer . The increase in ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films