Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 34
As the temperature was increased , the dielectric constant increased and the loss
decreased , indicative of a tendency to the ... Modulus and hardness increased
with increasing curing temperature , again indicating the tendency to the fully ...
As the temperature was increased , the dielectric constant increased and the loss
decreased , indicative of a tendency to the ... Modulus and hardness increased
with increasing curing temperature , again indicating the tendency to the fully ...
Page 175
400 Fused Silica 0 - 6 Crack Velocity , v ( m s * ' ) 460 , 400 0 450 460 1E - 8
Increasing Curing Time or Temperature 1E ... times and greater curing
temperatures lead to films with increased crack driving forces but decreased
crack velocities .
400 Fused Silica 0 - 6 Crack Velocity , v ( m s * ' ) 460 , 400 0 450 460 1E - 8
Increasing Curing Time or Temperature 1E ... times and greater curing
temperatures lead to films with increased crack driving forces but decreased
crack velocities .
Page 285
By combining ( 3 ) and ( 4 ) one obtains : ( 5 ) V A Increasing the viscosity of the
slurry increases hol , he and o , and ... and that can be achieved by increasing u
and U . Note that the slurry film thickness is also increased at the same time .
By combining ( 3 ) and ( 4 ) one obtains : ( 5 ) V A Increasing the viscosity of the
slurry increases hol , he and o , and ... and that can be achieved by increasing u
and U . Note that the slurry film thickness is also increased at the same time .
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Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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adhesion annealing applications atoms bonds calculated capacitance carbon cause characteristics chemical compared concentration copper crack curing decrease density dependence deposition depth determined developed devices dielectric constant diffusion e-beam effect electrical electron energy etch Figure fluorine frequency function glass heating higher hydrogen increase indicate integration interconnect interface layer less lines load low-k lower materials measured mechanical metal moisture observed obtained organic oxide oxygen peak performance plasma polished polyimide polymer polymerization porosity porous precursors present Proc properties pulse range ratio reaction reduced relative removal Research resistance samples shown in Figure shows silica silicon SiO2 spectra stability strength stress structure substrate surface Symp Table technique temperature thermal thickness thin films treatment values Volume wafer wiring xerogel