Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 29
... indicating that Si - OC2H , bonds were completely removed as desired . A peak at 920cm1 and a broad peak around 3500cm1 indicate that there were Si - OH bonds and H2O in the as - grown film . A peak around 2300cm1 originated from CO2 ...
... indicating that Si - OC2H , bonds were completely removed as desired . A peak at 920cm1 and a broad peak around 3500cm1 indicate that there were Si - OH bonds and H2O in the as - grown film . A peak around 2300cm1 originated from CO2 ...
Page 76
... indicate that the majority of oxygen which enters the pulsed plasma via the HFPO reactive precursor exits the deposition chamber without depositing on the film surface . A study of the thermal decomposition of HFPO indicates that HFPO ...
... indicate that the majority of oxygen which enters the pulsed plasma via the HFPO reactive precursor exits the deposition chamber without depositing on the film surface . A study of the thermal decomposition of HFPO indicates that HFPO ...
Page 174
... indicate the responses for SiO2 ( a = 2.46 Å ) , fully polymerized SSQ ( a = 2.85 Å ) , and partially polymerized ... indicate that such curing decreased the observed crack velocity . The solid lines in Fig . 3 indicate predicted crack ...
... indicate the responses for SiO2 ( a = 2.46 Å ) , fully polymerized SSQ ( a = 2.85 Å ) , and partially polymerized ... indicate that such curing decreased the observed crack velocity . The solid lines in Fig . 3 indicate predicted crack ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films