Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 29
... indicating that the dominant composition of the grown film was Si , O and C , with concentration ratio , Si : C : O ... indicates the existence of dense Si - C bonds in the film . Two peaks were seen to be overlapped around 800cm1 ; the ...
... indicating that the dominant composition of the grown film was Si , O and C , with concentration ratio , Si : C : O ... indicates the existence of dense Si - C bonds in the film . Two peaks were seen to be overlapped around 800cm1 ; the ...
Page 76
... indicate that the majority of oxygen which enters the pulsed plasma via the HFPO reactive precursor exits the deposition chamber without depositing on the film surface . A study of the thermal decomposition of HFPO indicates that HFPO ...
... indicate that the majority of oxygen which enters the pulsed plasma via the HFPO reactive precursor exits the deposition chamber without depositing on the film surface . A study of the thermal decomposition of HFPO indicates that HFPO ...
Page 368
... indicating that there was no significant surface hydrogen desorption during measurement . However , the hydrogen signal decreased with the increase in He dose for the CH , film . The fitted line indicates that the initial value of ...
... indicating that there was no significant surface hydrogen desorption during measurement . However , the hydrogen signal decreased with the increase in He dose for the CH , film . The fitted line indicates that the initial value of ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films