Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 236
... initial annealing , the spectra do not demonstrate a detectable change for the further annealing ( > 1.5 hours ) . Thus , after initial annealing , the structure of the a - F : C film tends to be thermally stable , which is in agreement ...
... initial annealing , the spectra do not demonstrate a detectable change for the further annealing ( > 1.5 hours ) . Thus , after initial annealing , the structure of the a - F : C film tends to be thermally stable , which is in agreement ...
Page 238
... initial stage of annealing . The mechanical , chemical and electrical properties of the a - F : C film tend to be thermally stable after the initial annealing and the film retains reasonably good electrical properties as a low - k ...
... initial stage of annealing . The mechanical , chemical and electrical properties of the a - F : C film tend to be thermally stable after the initial annealing and the film retains reasonably good electrical properties as a low - k ...
Page 368
... initial value of hydrogen was about three times higher than the observed value ( calculated from a 50 - μC dose ) . From Figs . 4 and 5 , we corrected the initial hydrogen concentration at the surface to 71 % for the CF + CH , film and ...
... initial value of hydrogen was about three times higher than the observed value ( calculated from a 50 - μC dose ) . From Figs . 4 and 5 , we corrected the initial hydrogen concentration at the surface to 71 % for the CF + CH , film and ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines Microelectronics modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films