Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
From inside the book
Results 1-3 of 56
Page 322
... Interface - Related Instabilities Interface - related instabilities occur when the low - K polymer is in direct contact with either the gate metal or Si substrate . The instabilities at the polymer / Si interface are considered first ...
... Interface - Related Instabilities Interface - related instabilities occur when the low - K polymer is in direct contact with either the gate metal or Si substrate . The instabilities at the polymer / Si interface are considered first ...
Page 331
... interface water concentration . Moisture effects are particularly strong for many polymeric interfaces . This is partly because these materials are of very low density so that water molecules easily penetrate the films to reach interfaces ...
... interface water concentration . Moisture effects are particularly strong for many polymeric interfaces . This is partly because these materials are of very low density so that water molecules easily penetrate the films to reach interfaces ...
Page 338
... interface fails by delamination , the common perception is that either the stresses are too high or the interface is too weak . This work , however , demonstrated that in most cases the interface toughness exceeds the driving force for ...
... interface fails by delamination , the common perception is that either the stresses are too high or the interface is too weak . This work , however , demonstrated that in most cases the interface toughness exceeds the driving force for ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
41 other sections not shown
Other editions - View all
Common terms and phrases
1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films