Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
From inside the book
Results 1-3 of 73
Page 134
... layer . The applied released energy during peeling of n - layers is : G S app = ΣAG 3 1 where AGi is the total energy stored in the ith layer before peeling less the amount of energy stored after peeling due to the constraint of the other ...
... layer . The applied released energy during peeling of n - layers is : G S app = ΣAG 3 1 where AGi is the total energy stored in the ith layer before peeling less the amount of energy stored after peeling due to the constraint of the other ...
Page 135
... layer thickness is significantly greater than the thickness of the test Equation 6 simplifies to Equation 2 layer for the modified ELT geometry . An engineering approach to fracture that does not require knowledge of the plane - strain ...
... layer thickness is significantly greater than the thickness of the test Equation 6 simplifies to Equation 2 layer for the modified ELT geometry . An engineering approach to fracture that does not require knowledge of the plane - strain ...
Page 282
... layer . Thus At - layer is a reaction product and its thickness is a function of chemical composition of the slurry and the nature of chemicals , temperature , stress or load , the effective net diffusion coefficient , and the surface ...
... layer . Thus At - layer is a reaction product and its thickness is a function of chemical composition of the slurry and the nature of chemicals , temperature , stress or load , the effective net diffusion coefficient , and the surface ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
41 other sections not shown
Other editions - View all
Common terms and phrases
1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films