Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 35
It is also apparent that the SOG materials are less stiff and less hard than SiO2 ,
and , more importantly , have a thermal expansion coefficient greater than that of
Si , compared with that of SiO2 which is less than that of Si . The consequence of
...
It is also apparent that the SOG materials are less stiff and less hard than SiO2 ,
and , more importantly , have a thermal expansion coefficient greater than that of
Si , compared with that of SiO2 which is less than that of Si . The consequence of
...
Page 230
Compared to silicon oxide , DLC is much less resistive , having a leakage flux of
approximately 10 - 9 A / cm2 at a an applied field of 10 % V / cm . The test
structure to evaluate this leakage effect is a 3 . 80 m long copper serpentine ,
separated ...
Compared to silicon oxide , DLC is much less resistive , having a leakage flux of
approximately 10 - 9 A / cm2 at a an applied field of 10 % V / cm . The test
structure to evaluate this leakage effect is a 3 . 80 m long copper serpentine ,
separated ...
Page 293
Therefore , the silicon oxide formation process was less oxidized at the surface of
the Cu even with the oxygen plasma ambient at a substrate temperature of 300°C
. In the case of 500 - nm - thick aC : F , the reflection of the Cu decreases to 10 ...
Therefore , the silicon oxide formation process was less oxidized at the surface of
the Cu even with the oxygen plasma ambient at a substrate temperature of 300°C
. In the case of 500 - nm - thick aC : F , the reflection of the Cu decreases to 10 ...
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Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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Common terms and phrases
adhesion annealing applications atoms bonds calculated capacitance carbon cause characteristics chemical compared concentration copper crack curing decrease density dependence deposition depth determined developed devices dielectric constant diffusion e-beam effect electrical electron energy etch Figure fluorine frequency function glass heating higher hydrogen increase indicate integration interconnect interface layer less lines load low-k lower materials measured mechanical metal moisture observed obtained organic oxide oxygen peak performance plasma polished polyimide polymer polymerization porosity porous precursors present Proc properties pulse range ratio reaction reduced relative removal Research resistance samples shown in Figure shows silica silicon SiO2 spectra stability strength stress structure substrate surface Symp Table technique temperature thermal thickness thin films treatment values Volume wafer wiring xerogel
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1998 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558994173, 9781558994171 |
| Export Citation | BiBTeX EndNote RefMan |