Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 330
... load because the kinetics is dominated by moisture transport from the environment to the crack tip . In region III , the load approaches the critical load and the fracture is insensitive to moisture but exhibits strong stress dependence ...
... load because the kinetics is dominated by moisture transport from the environment to the crack tip . In region III , the load approaches the critical load and the fracture is insensitive to moisture but exhibits strong stress dependence ...
Page 335
... load as a function of time showing the history of a dry AI / PAE2 sample tested in a moisture saturated environment . The load was increased rapidly by stepping the displacement at a high rate so that crack growth in this period of time ...
... load as a function of time showing the history of a dry AI / PAE2 sample tested in a moisture saturated environment . The load was increased rapidly by stepping the displacement at a high rate so that crack growth in this period of time ...
Page 336
... load appreciably . At the lower limit , the rate of load drop was small so that fluctuations of signal from load cell became a problem . Because of the upper limit , it was not successful to reach the critical fracture region ( region ...
... load appreciably . At the lower limit , the rate of load drop was small so that fluctuations of signal from load cell became a problem . Because of the upper limit , it was not successful to reach the critical fracture region ( region ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films