Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 75
... loss through CF3 detachment and HF elimination . Pulsed plasma films from all three precursors gave dielectric constants of 2.4 , with loss tangents on the order of 102. Dielectric measurements of pulsed plasma films from ...
... loss through CF3 detachment and HF elimination . Pulsed plasma films from all three precursors gave dielectric constants of 2.4 , with loss tangents on the order of 102. Dielectric measurements of pulsed plasma films from ...
Page 83
... loss is most likely one of HF elimination . Film from CH2F2 reveals only a loss from the CF region at -220 ppm . These CF groups probably have attached hydrogens i.e. , -CFH- , since FTIR also indicates hydrogen being present ...
... loss is most likely one of HF elimination . Film from CH2F2 reveals only a loss from the CF region at -220 ppm . These CF groups probably have attached hydrogens i.e. , -CFH- , since FTIR also indicates hydrogen being present ...
Page 165
... losses at lower frequencies can be explained and estimated in terms of the anharmonicity of lattice vibrations . Moreover , doping , defects , chemical imperfections , order - disorder etc. also affect the dielectric loss and make it ...
... losses at lower frequencies can be explained and estimated in terms of the anharmonicity of lattice vibrations . Moreover , doping , defects , chemical imperfections , order - disorder etc. also affect the dielectric loss and make it ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films