Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 10
... dielectric layers should be carefully integrated due to potential film adhesion and cracking issues caused by subsequent thermal and mechanical stress . INTERCONNECT SYSTEMS WITH LOW K DIELECTRICS Numerous low k organic and inorganic ...
... dielectric layers should be carefully integrated due to potential film adhesion and cracking issues caused by subsequent thermal and mechanical stress . INTERCONNECT SYSTEMS WITH LOW K DIELECTRICS Numerous low k organic and inorganic ...
Page 63
... low- dielectric constant ( low k ) material SiO ( F , C ) . Fluorine and carbon were implanted into SiO2 films by CF4 PII using an ICP plasma reactor . The effective dielectric constant of the films was significantly reduced after PII ...
... low- dielectric constant ( low k ) material SiO ( F , C ) . Fluorine and carbon were implanted into SiO2 films by CF4 PII using an ICP plasma reactor . The effective dielectric constant of the films was significantly reduced after PII ...
Page 165
DIELECTRIC BEHAVIOR AND PHONON DAMPING IN LOW - DIELECTRIC CONSTANT PEROVSKITE MATERIALS Ram S. Katiyar , Igor Siny , University of Puerto Rico , Dept of Physics , San Juan , PR 00931 R. Guo , A.S. Bhalla , Penn State Univ , Material ...
DIELECTRIC BEHAVIOR AND PHONON DAMPING IN LOW - DIELECTRIC CONSTANT PEROVSKITE MATERIALS Ram S. Katiyar , Igor Siny , University of Puerto Rico , Dept of Physics , San Juan , PR 00931 R. Guo , A.S. Bhalla , Penn State Univ , Material ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films