Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 4
... lower permittivity ( low k ) . Due to the lower resistivity of copper as compared with traditional AlCu metallization ( 2.0 μ - ohm cm vs. 3.3 μ - ohm - cm ) , lower resistance can be obtained for metal leads of similar thickness ...
... lower permittivity ( low k ) . Due to the lower resistivity of copper as compared with traditional AlCu metallization ( 2.0 μ - ohm cm vs. 3.3 μ - ohm - cm ) , lower resistance can be obtained for metal leads of similar thickness ...
Page 39
... lower ring symmetry than the initial materials . Dielectric properties do not appear to vary with the structural symmetry about the O - Si - O moiety nor with the R substituents , but rather depend on the extent of three - dimensional ...
... lower ring symmetry than the initial materials . Dielectric properties do not appear to vary with the structural symmetry about the O - Si - O moiety nor with the R substituents , but rather depend on the extent of three - dimensional ...
Page 270
... lower self - bias voltages which correspond to a lower etch rate . The change in refractive index is not observed when Parylene - N is etched in a fluorocarbon - free discharge , for example oxygen or argon . This suggests that the ...
... lower self - bias voltages which correspond to a lower etch rate . The change in refractive index is not observed when Parylene - N is etched in a fluorocarbon - free discharge , for example oxygen or argon . This suggests that the ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films