Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 146
... measured capacitance in pF , and A is the metal plate area . The capacitance , C , was measured directly using an HP4192A Impedance Analyzer at 1MHz . Because the metal dot diameters are much larger than the film thickness , the fringe ...
... measured capacitance in pF , and A is the metal plate area . The capacitance , C , was measured directly using an HP4192A Impedance Analyzer at 1MHz . Because the metal dot diameters are much larger than the film thickness , the fringe ...
Page 147
... measured out - of - plane and in - plane dielectric constants are shown in the Table 2. As expected from the birefringence measurements , MAT2 is relatively isotropic and the measured Aɛ is about the same as the predicted Aɛ . In ...
... measured out - of - plane and in - plane dielectric constants are shown in the Table 2. As expected from the birefringence measurements , MAT2 is relatively isotropic and the measured Aɛ is about the same as the predicted Aɛ . In ...
Page 155
... measured by ISTS [ 1 ] . By combining with this in - plane thermal diffusivity measurement , we can obtain a complete view of the thermal anisotropy . The data is shown in Fig . 5. , where the in - plane data was obtained from the ...
... measured by ISTS [ 1 ] . By combining with this in - plane thermal diffusivity measurement , we can obtain a complete view of the thermal anisotropy . The data is shown in Fig . 5. , where the in - plane data was obtained from the ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films