Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 146
The refractive indices in the out - of plane ( ntm ) and the in - plane ( nte )
directions of the films were measured using a Metricon prism coupler ( model
2010 ) at 632 . 8nm . MIM parallelplate capacitors were prepared to obtain the out
- of ...
The refractive indices in the out - of plane ( ntm ) and the in - plane ( nte )
directions of the films were measured using a Metricon prism coupler ( model
2010 ) at 632 . 8nm . MIM parallelplate capacitors were prepared to obtain the out
- of ...
Page 147
Table 2 compares the measured out - of - plane dielectric constant to the in -
plane dielectric constant at 1MHz determined from experiment and simulation .
Also the predicted dielectric anisotropies from Table 1 and the anisotropies
between ...
Table 2 compares the measured out - of - plane dielectric constant to the in -
plane dielectric constant at 1MHz determined from experiment and simulation .
Also the predicted dielectric anisotropies from Table 1 and the anisotropies
between ...
Page 155
The in - plane thermal diffusivity can be measured by ISTS [ 1 ] . By combining
with this in - plane thermal diffusivity measurement , we can obtain a complete
view of the thermal anisotropy . The data is shown in Fig . 5 . , where the in -
plane ...
The in - plane thermal diffusivity can be measured by ISTS [ 1 ] . By combining
with this in - plane thermal diffusivity measurement , we can obtain a complete
view of the thermal anisotropy . The data is shown in Fig . 5 . , where the in -
plane ...
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Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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adhesion annealing applications atoms bonds calculated capacitance carbon cause characteristics chemical compared concentration copper crack curing decrease density dependence deposition depth determined developed devices dielectric constant diffusion e-beam effect electrical electron energy etch Figure fluorine frequency function glass heating higher hydrogen increase indicate integration interconnect interface layer less lines load low-k lower materials measured mechanical metal moisture observed obtained organic oxide oxygen peak performance plasma polished polyimide polymer polymerization porosity porous precursors present Proc properties pulse range ratio reaction reduced relative removal Research resistance samples shown in Figure shows silica silicon SiO2 spectra stability strength stress structure substrate surface Symp Table technique temperature thermal thickness thin films treatment values Volume wafer wiring xerogel
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1998 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558994173, 9781558994171 |
| Export Citation | BiBTeX EndNote RefMan |