Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 16
... metal - metal binding forces . As a consequence , the solubility of those metals in polymers should be extremely low un- der equilibrium conditions , and practically no intermixing should occur when a piece of metal of low reactivity is ...
... metal - metal binding forces . As a consequence , the solubility of those metals in polymers should be extremely low un- der equilibrium conditions , and practically no intermixing should occur when a piece of metal of low reactivity is ...
Page 20
... metal cluster- ing effectively blocks significant metal diffusion into the polymer beyond a penetration depth of a few nm for deposition rates above 10 ML / min . This has been confirmed by our recent XPS28 and TEM40 measurements ...
... metal cluster- ing effectively blocks significant metal diffusion into the polymer beyond a penetration depth of a few nm for deposition rates above 10 ML / min . This has been confirmed by our recent XPS28 and TEM40 measurements ...
Page 22
... metal diffusion into polymers by metal aggregation . Based on these investigations , one does not expect any significant diffusion of metals into polymers after formation of a continuous metal film . In contrast to these expectations ...
... metal diffusion into polymers by metal aggregation . Based on these investigations , one does not expect any significant diffusion of metals into polymers after formation of a continuous metal film . In contrast to these expectations ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines Microelectronics modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films