Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 53
... metal lines . The e - beam densified film above the metal lines is converted to a SiO , like layer and thus has lower wet etch rate . Also , note that the physical boundary between the top e - beam modified layer and the CVD oxide liner ...
... metal lines . The e - beam densified film above the metal lines is converted to a SiO , like layer and thus has lower wet etch rate . Also , note that the physical boundary between the top e - beam modified layer and the CVD oxide liner ...
Page 149
... metal lines . Especially from these two spectra , it can be known that MAT1 is much more anisotropic between the parallel direction and the perpendicular direction to metal line than MAT2 . The changes in molecular orientation observed ...
... metal lines . Especially from these two spectra , it can be known that MAT1 is much more anisotropic between the parallel direction and the perpendicular direction to metal line than MAT2 . The changes in molecular orientation observed ...
Page 357
... lines has also been studied by SEM analysis after stripping the dielectric from the metal lines . Of particular interest is the origin of the erratic resistance behavior of PAE - passivated lines . Figure 4 ( a ) illustrates ...
... lines has also been studied by SEM analysis after stripping the dielectric from the metal lines . Of particular interest is the origin of the erratic resistance behavior of PAE - passivated lines . Figure 4 ( a ) illustrates ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films