Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 16
... method to measure sticking coeffi- cients of metals on polymers . In particular , the sensitivity of the technique is sufficient to study the initial stages of the deposition process , which are most important in determining interface ...
... method to measure sticking coeffi- cients of metals on polymers . In particular , the sensitivity of the technique is sufficient to study the initial stages of the deposition process , which are most important in determining interface ...
Page 32
... method has additional great advantages , in comparison with the current SiO2 - LPD method using a saturated H2SiF6 solution , in the sense that the former can be applied to substrates with metal - lines ; one of desirable conditions for ...
... method has additional great advantages , in comparison with the current SiO2 - LPD method using a saturated H2SiF6 solution , in the sense that the former can be applied to substrates with metal - lines ; one of desirable conditions for ...
Page 177
... method , to date , is able to measure the viscosity of a thin film on the order of 1,000 nanometers within a reasonable frequency ( < 1MHz ) or frequency range ( 2 decades ) . Bulk rheological instrumentation techniques are quite ...
... method , to date , is able to measure the viscosity of a thin film on the order of 1,000 nanometers within a reasonable frequency ( < 1MHz ) or frequency range ( 2 decades ) . Bulk rheological instrumentation techniques are quite ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films