Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 128
... Microns Absolute Conc F / Total Atoms -0.10 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 Depth in Microns Figure 3. Fluorine depth profile of CaF2 crystal . Figure 4. Fluorine depth profile of 1E16 fluorine implant in Si . We have ...
... Microns Absolute Conc F / Total Atoms -0.10 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 Depth in Microns Figure 3. Fluorine depth profile of CaF2 crystal . Figure 4. Fluorine depth profile of 1E16 fluorine implant in Si . We have ...
Page 177
... micron may deviate significantly from bulk values [ 4 ] . The mechanical properties of the ultra - thin films ( sub - micron ) are experimentally difficult to determine with precision . The quartz crystal microbalance is an established ...
... micron may deviate significantly from bulk values [ 4 ] . The mechanical properties of the ultra - thin films ( sub - micron ) are experimentally difficult to determine with precision . The quartz crystal microbalance is an established ...
Page 241
... micron feature size mandates the search for low dielectric constant interlayer dielectric materials . A large number of materials and processing techniques has been suggested , but so far none of the proposed dielectric materials as ...
... micron feature size mandates the search for low dielectric constant interlayer dielectric materials . A large number of materials and processing techniques has been suggested , but so far none of the proposed dielectric materials as ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films