Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 167
... mode classification is as given below : r = 4F1u ( IR ) + F2u ( f ) Modes that are active in both Raman and infrared are listed as ' f ' . Evidently , in such a structure , there are no Raman active modes in the first order vibrational ...
... mode classification is as given below : r = 4F1u ( IR ) + F2u ( f ) Modes that are active in both Raman and infrared are listed as ' f ' . Evidently , in such a structure , there are no Raman active modes in the first order vibrational ...
Page 168
... mode , so we don't expect some changes in this mode even if the symmetry of BMT reduces down to the hexagonal P3m1 space group . The low intensity peak at about 430 cm1 correlates with the analogous weak band in SAT at 540 cm1 [ 10 ] ...
... mode , so we don't expect some changes in this mode even if the symmetry of BMT reduces down to the hexagonal P3m1 space group . The low intensity peak at about 430 cm1 correlates with the analogous weak band in SAT at 540 cm1 [ 10 ] ...
Page 169
... mode analysis and mode assignment , the mode positions and their behavior in comparison with related 1 : 1 compounds , no appropriate splitting of the degenerate modes ) let us to conclude that the Mg and Ta ions with 1 : 1 composition ...
... mode analysis and mode assignment , the mode positions and their behavior in comparison with related 1 : 1 compounds , no appropriate splitting of the degenerate modes ) let us to conclude that the Mg and Ta ions with 1 : 1 composition ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films