Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 158
... modulus values for 340 nm thick films . Cure temperature [ C ] Hardness . [ GPa ] E * [ GPa ] 400 0.5 4 420 1 8.4 440 1.5 11.5 460 2.2 19.8 TABLE . II Composite hardness and modulus values for 800 nm thick films . All data are the ...
... modulus values for 340 nm thick films . Cure temperature [ C ] Hardness . [ GPa ] E * [ GPa ] 400 0.5 4 420 1 8.4 440 1.5 11.5 460 2.2 19.8 TABLE . II Composite hardness and modulus values for 800 nm thick films . All data are the ...
Page 187
... modulus Ezeff of the film . The significance of this modulus is evident from the following explanation . Recall residual stresses are generated in the plane of the film due to CTE mismatches with the substrate . Since the CTE of BCB ...
... modulus Ezeff of the film . The significance of this modulus is evident from the following explanation . Recall residual stresses are generated in the plane of the film due to CTE mismatches with the substrate . Since the CTE of BCB ...
Page 188
... modulus and the reported in - plane modulus further validates this assumption . The through - plane CTE for BCB measured using this approach was previously reported by Hodge13 . He reported an effective through - plane expansion of ...
... modulus and the reported in - plane modulus further validates this assumption . The through - plane CTE for BCB measured using this approach was previously reported by Hodge13 . He reported an effective through - plane expansion of ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films