Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 82
... observed in pulsed plasma films from C2H2F4 and CH2F2 . ( b ) Expansion of CHx region from Figure 5a . The C2H2F4 and CH2F1⁄2 spectra indicate hydrogen incorporation into the pulsed plasma films . The peaks are shifted to higher ...
... observed in pulsed plasma films from C2H2F4 and CH2F2 . ( b ) Expansion of CHx region from Figure 5a . The C2H2F4 and CH2F1⁄2 spectra indicate hydrogen incorporation into the pulsed plasma films . The peaks are shifted to higher ...
Page 362
... observed when the samples were exposed to changes in the relative humidity . No saturation of this effect was observed in subsequent cycles . Out - of plane swelling Swelling of the polymer film perpendicular to the substrate plane is ...
... observed when the samples were exposed to changes in the relative humidity . No saturation of this effect was observed in subsequent cycles . Out - of plane swelling Swelling of the polymer film perpendicular to the substrate plane is ...
Page 370
... observed that the H2 annealing significantly improved the degradation of the interface between a - C : F film and SiO , or SiN film whichever a - C : F films were grown with or without adding CH . This can be attributed to the reduced ...
... observed that the H2 annealing significantly improved the degradation of the interface between a - C : F film and SiO , or SiN film whichever a - C : F films were grown with or without adding CH . This can be attributed to the reduced ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films