Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 82
CH , stretches are only observed in pulsed plasma films from C2H2F4 and
CH2F2 . ( b ) Expansion of CH , region from Figure 5a . The C2H2F4 and CH F2
spectra indicate hydrogen incorporation into the pulsed plasma films . The peaks
are ...
CH , stretches are only observed in pulsed plasma films from C2H2F4 and
CH2F2 . ( b ) Expansion of CH , region from Figure 5a . The C2H2F4 and CH F2
spectra indicate hydrogen incorporation into the pulsed plasma films . The peaks
are ...
Page 362
With some polyimides , especially with P12540 , a slight relaxation was observed
when the samples were exposed to changes in the relative humidity . No
saturation of this effect was observed in subsequent cycles . Out - of plane
swelling ...
With some polyimides , especially with P12540 , a slight relaxation was observed
when the samples were exposed to changes in the relative humidity . No
saturation of this effect was observed in subsequent cycles . Out - of plane
swelling ...
Page 370
We also observed that the H , annealing significantly improved the degradation of
the interface between a - C : F film and SiO2 or Sin film whichever a - C : F films
were grown with or without adding CH , . This can be attributed to the reduced ...
We also observed that the H , annealing significantly improved the degradation of
the interface between a - C : F film and SiO2 or Sin film whichever a - C : F films
were grown with or without adding CH , . This can be attributed to the reduced ...
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Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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Common terms and phrases
adhesion annealing applications atoms bonds calculated capacitance carbon cause characteristics chemical compared concentration copper crack curing decrease density dependence deposition depth determined developed devices dielectric constant diffusion e-beam effect electrical electron energy etch Figure fluorine frequency function glass heating higher hydrogen increase indicate integration interconnect interface layer less lines load low-k lower materials measured mechanical metal moisture observed obtained organic oxide oxygen peak performance plasma polished polyimide polymer polymerization porosity porous precursors present Proc properties pulse range ratio reaction reduced relative removal Research resistance samples shown in Figure shows silica silicon SiO2 spectra stability strength stress structure substrate surface Symp Table technique temperature thermal thickness thin films treatment values Volume wafer wiring xerogel
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1998 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558994173, 9781558994171 |
| Export Citation | BiBTeX EndNote RefMan |