Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
From inside the book
Results 1-3 of 37
Page 90
... occurs at lower temperature than those of Tg of both PEI ( ≈488K ) and PAI ( ≈543K ) . The solid line is a calculated curve and it agrees very well with experimental data . Figure 3 represents the cloud - point curves of PEI / PEO ...
... occurs at lower temperature than those of Tg of both PEI ( ≈488K ) and PAI ( ≈543K ) . The solid line is a calculated curve and it agrees very well with experimental data . Figure 3 represents the cloud - point curves of PEI / PEO ...
Page 107
... occurs . Hydrophobic films were processed and the thickness was measured by ellipsometry . MOSCAP structures were formed and the capacitance at 1 MHz was measured immediately after curing , re - baking and re - curing . Films were left ...
... occurs . Hydrophobic films were processed and the thickness was measured by ellipsometry . MOSCAP structures were formed and the capacitance at 1 MHz was measured immediately after curing , re - baking and re - curing . Films were left ...
Page 159
... occurs , called onsetting values , have a < 10 % std measured over 5 samples . SEM micrographs ( Figure 3 ) demonstrates the difference in cracking behavior of the low vs. high curing temperature : at 3mN maximum indentation force the ...
... occurs , called onsetting values , have a < 10 % std measured over 5 samples . SEM micrographs ( Figure 3 ) demonstrates the difference in cracking behavior of the low vs. high curing temperature : at 3mN maximum indentation force the ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
41 other sections not shown
Other editions - View all
Common terms and phrases
1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films