Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
From inside the book
Results 1-3 of 44
Page 202
Organic spin - on polymers are generally capable of longer range planarization
than the SOG ' s , but none of them provide planarization on the same scale as
CMP . The planarization properties of a given film depend upon such properties
as ...
Organic spin - on polymers are generally capable of longer range planarization
than the SOG ' s , but none of them provide planarization on the same scale as
CMP . The planarization properties of a given film depend upon such properties
as ...
Page 207
Figure 4 shows an example of vias etched through an organic low k material .
The slight bowing in the via walls was caused by plastic deformation of the
polymer during SEM sample preparation . The photoresist thickness was
adjusted so as ...
Figure 4 shows an example of vias etched through an organic low k material .
The slight bowing in the via walls was caused by plastic deformation of the
polymer during SEM sample preparation . The photoresist thickness was
adjusted so as ...
Page 270
Patterning of Organic Materials For the formation of vias and trenches in organic
dielectrics , a hard mask can be used to overcome the marginal etch selectivity of
the organic dielectric to photoresist . As was explained in the introduction , an ...
Patterning of Organic Materials For the formation of vias and trenches in organic
dielectrics , a hard mask can be used to overcome the marginal etch selectivity of
the organic dielectric to photoresist . As was explained in the introduction , an ...
What people are saying - Write a review
We haven't found any reviews in the usual places.
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
42 other sections not shown
Other editions - View all
Common terms and phrases
adhesion annealing applications atoms bonds calculated capacitance carbon cause characteristics chemical compared concentration copper crack curing decrease density dependence deposition depth determined developed devices dielectric constant diffusion e-beam effect electrical electron energy etch Figure fluorine frequency function glass heating higher hydrogen increase indicate integration interconnect interface layer less lines load low-k lower materials measured mechanical metal moisture observed obtained organic oxide oxygen peak performance plasma polished polyimide polymer polymerization porosity porous precursors present Proc properties pulse range ratio reaction reduced relative removal Research resistance samples shown in Figure shows silica silicon SiO2 spectra stability strength stress structure substrate surface Symp Table technique temperature thermal thickness thin films treatment values Volume wafer wiring xerogel