Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 202
... Organic spin - on polymers are generally capable of longer range planarization than the SOG's , but none of them provide planarization on the same scale as CMP . The planarization properties of a given film depend upon such properties ...
... Organic spin - on polymers are generally capable of longer range planarization than the SOG's , but none of them provide planarization on the same scale as CMP . The planarization properties of a given film depend upon such properties ...
Page 207
... organic material sputters the corners of the hardmask . The organic via etch process should be adjusted so as to minimize sputtering of the hardmask . Hardmask thickness optimization is another way of ensuring that sputtering does not ...
... organic material sputters the corners of the hardmask . The organic via etch process should be adjusted so as to minimize sputtering of the hardmask . Hardmask thickness optimization is another way of ensuring that sputtering does not ...
Page 270
... Organic Materials For the formation of vias and trenches in organic dielectrics , a hard mask can be used to overcome the marginal etch selectivity of the organic dielectric to photoresist . As was explained in the introduction , an ...
... Organic Materials For the formation of vias and trenches in organic dielectrics , a hard mask can be used to overcome the marginal etch selectivity of the organic dielectric to photoresist . As was explained in the introduction , an ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films