Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 251
... oxygen plasma . This behaviour is principally different than in a fluorine plasma afterglow where the etch rate of the polymers was close to zero ( Fig . 1 ) . DISCUSSION 1. Effects of fluorine and oxygen . The differences in the etch ...
... oxygen plasma . This behaviour is principally different than in a fluorine plasma afterglow where the etch rate of the polymers was close to zero ( Fig . 1 ) . DISCUSSION 1. Effects of fluorine and oxygen . The differences in the etch ...
Page 265
... oxygen etching chemistry . As an example , the patterning of Parylene - N in an oxygen chemistry is discussed . In this case , the ion and the oxygen radical flux need to be properly controlled to obtain a directional etching process ...
... oxygen etching chemistry . As an example , the patterning of Parylene - N in an oxygen chemistry is discussed . In this case , the ion and the oxygen radical flux need to be properly controlled to obtain a directional etching process ...
Page 271
... oxygen flow rate . Polymer etch rates in a pure HDP oxygen plasma can be very high ( ~ 3 um / min for Parylene - N ) . Due to the aggressive nature of an oxygen discharge , the etch can be very isotropic . An example is shown in Fig ...
... oxygen flow rate . Polymer etch rates in a pure HDP oxygen plasma can be very high ( ~ 3 um / min for Parylene - N ) . Due to the aggressive nature of an oxygen discharge , the etch can be very isotropic . An example is shown in Fig ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films