Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 29
... peak at 1410cm1 from Si - C bonds was not clearly resolved due to large noise . Peaks at 2910cm1 and 2970cm1 came from C - H bonds . Peaks at 1200cm1 and 1110cm1 from O - C2H , bonds were not detected , indicating that Si - OC2H , bonds ...
... peak at 1410cm1 from Si - C bonds was not clearly resolved due to large noise . Peaks at 2910cm1 and 2970cm1 came from C - H bonds . Peaks at 1200cm1 and 1110cm1 from O - C2H , bonds were not detected , indicating that Si - OC2H , bonds ...
Page 60
... peaks are associated with water ( m / e : 18 ) evolution . Peak centered at 250 ° C is attributed to surface moisture . The other peak , which is centered at 370 ° C , is due to hydrogen - bonded ( HB ) H2O to Si - OH . The HF ( m / e : 20 ) ...
... peaks are associated with water ( m / e : 18 ) evolution . Peak centered at 250 ° C is attributed to surface moisture . The other peak , which is centered at 370 ° C , is due to hydrogen - bonded ( HB ) H2O to Si - OH . The HF ( m / e : 20 ) ...
Page 285
... peak area ( % ) As - deposited 96 O and O Is at peak area ( % ) 4 C - C 100 C and C is at peak area ( % ) 90 C - C 92 O and O Is at peak area ( % ) 10 C - O 8 After CMP * 96 84 16 C - C 96 C - 04 C - C 81 C - O 14 C = O 5 * Both films ...
... peak area ( % ) As - deposited 96 O and O Is at peak area ( % ) 4 C - C 100 C and C is at peak area ( % ) 90 C - C 92 O and O Is at peak area ( % ) 10 C - O 8 After CMP * 96 84 16 C - C 96 C - 04 C - C 81 C - O 14 C = O 5 * Both films ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films