Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 72
... percentage of air incorporated into the film , or porosity , was measured by IR spectroscopy . In this technique , the IR absorbance and the thickness are measured for films of both neat and foamed MSSQ . Beers ' law can then be used to ...
... percentage of air incorporated into the film , or porosity , was measured by IR spectroscopy . In this technique , the IR absorbance and the thickness are measured for films of both neat and foamed MSSQ . Beers ' law can then be used to ...
Page 84
... percentage ( ~ 9 % ) of Cl was also found in these films . Although the precursors were selected partially for their CF2 - forming ability , the competition between that reaction and HF elimination appears to be key in determining the ...
... percentage ( ~ 9 % ) of Cl was also found in these films . Although the precursors were selected partially for their CF2 - forming ability , the competition between that reaction and HF elimination appears to be key in determining the ...
Page 250
... percentage was calculated without taking ino account dilution by nitrogen . Fig.6a . The RIE profiles of BCB - structure in an O2 - plasma ( without post - dry - etch cleaning ) D18 WD10 b CA / P960498 / 11 Fig.6 . The RIE profiles of ...
... percentage was calculated without taking ino account dilution by nitrogen . Fig.6a . The RIE profiles of BCB - structure in an O2 - plasma ( without post - dry - etch cleaning ) D18 WD10 b CA / P960498 / 11 Fig.6 . The RIE profiles of ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films