Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 3
ABSTRACT The era of silicon Ultra - Large - Scale - Integration ( ULSI ) has
spurred an everincreasing level of functional integration on - chip , driving a need
for greater circuit density and higher performance . While traditional transistor ...
ABSTRACT The era of silicon Ultra - Large - Scale - Integration ( ULSI ) has
spurred an everincreasing level of functional integration on - chip , driving a need
for greater circuit density and higher performance . While traditional transistor ...
Page 10
polymer dielectrics where an oxide etch stop can be used , the performance
impact of the etch stop layer is less pronounced . However , from a reliability
standpoint multiple dielectric layers should be carefully integrated due to
potential film ...
polymer dielectrics where an oxide etch stop can be used , the performance
impact of the etch stop layer is less pronounced . However , from a reliability
standpoint multiple dielectric layers should be carefully integrated due to
potential film ...
Page 151
The significance of different thermal performance between low K dielectric
medium materials and SiO2 suggests that greater attention should be paid to
thermal properties for integrated devices with low K materials . INTRODUCTION
To ...
The significance of different thermal performance between low K dielectric
medium materials and SiO2 suggests that greater attention should be paid to
thermal properties for integrated devices with low K materials . INTRODUCTION
To ...
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Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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Common terms and phrases
adhesion annealing applications atoms bonds calculated capacitance carbon cause characteristics chemical compared concentration copper crack curing decrease density dependence deposition depth determined developed devices dielectric constant diffusion e-beam effect electrical electron energy etch Figure fluorine frequency function glass heating higher hydrogen increase indicate integration interconnect interface layer less lines load low-k lower materials measured mechanical metal moisture observed obtained organic oxide oxygen peak performance plasma polished polyimide polymer polymerization porosity porous precursors present Proc properties pulse range ratio reaction reduced relative removal Research resistance samples shown in Figure shows silica silicon SiO2 spectra stability strength stress structure substrate surface Symp Table technique temperature thermal thickness thin films treatment values Volume wafer wiring xerogel
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1998 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558994173, 9781558994171 |
| Export Citation | BiBTeX EndNote RefMan |