Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Results 1-3 of 31
Page 111
... performed on the bulk materials . Preliminary experiments into the feasibility of adapting the process to thin film fabrication were positive6,7 . As a result , this more extensive feasibility study was performed to refine the thin film ...
... performed on the bulk materials . Preliminary experiments into the feasibility of adapting the process to thin film fabrication were positive6,7 . As a result , this more extensive feasibility study was performed to refine the thin film ...
Page 234
... performed using the tape pull test and CMP . The isothermal test of thermal stability for the a - F : C films was performed in a vacuum chamber with a base pressure of 105 Torr , where a deposited wafer was annealed on a heated chuck ...
... performed using the tape pull test and CMP . The isothermal test of thermal stability for the a - F : C films was performed in a vacuum chamber with a base pressure of 105 Torr , where a deposited wafer was annealed on a heated chuck ...
Page 372
... performed using a many - electron embedding theory that permits the accurate computation of molecule - solid surface interactions . Calculations are carried out at an ab initio configuration interaction ( CI ) level , i.e. , all ...
... performed using a many - electron embedding theory that permits the accurate computation of molecule - solid surface interactions . Calculations are carried out at an ab initio configuration interaction ( CI ) level , i.e. , all ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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Common terms and phrases
1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films