Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
From inside the book
Results 1-3 of 8
Page 228
... photoresist , have very low selectivity . The strategy that we have elected to follow for damascene processing is to utilize a silicon nitride hard mask that also provides chemical - mechanical etch selectivity during the Cu CMP process ...
... photoresist , have very low selectivity . The strategy that we have elected to follow for damascene processing is to utilize a silicon nitride hard mask that also provides chemical - mechanical etch selectivity during the Cu CMP process ...
Page 252
... photoresist allows to decrease the thickness of the photoresist and inorganic hardmask . These predictions were examined by RIE of special BCB structures containing vias ( Fig.6 ) . One can see that the best etch profiles were really ...
... photoresist allows to decrease the thickness of the photoresist and inorganic hardmask . These predictions were examined by RIE of special BCB structures containing vias ( Fig.6 ) . One can see that the best etch profiles were really ...
Page 270
... photoresist , nitride etch - stop layers in self - aligned contacts ( SACs ) , and metallization layers . This requirement can be met by utilizing highly polymerizing discharges . Unfortunately , HSQ and MSQ etch at a lower rate than ...
... photoresist , nitride etch - stop layers in self - aligned contacts ( SACs ) , and metallization layers . This requirement can be met by utilizing highly polymerizing discharges . Unfortunately , HSQ and MSQ etch at a lower rate than ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
41 other sections not shown
Other editions - View all
Common terms and phrases
1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films