Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
From inside the book
Results 1-3 of 71
Page 93
... plasma polymerization technique to produce low dielectric constant materials ( k < 2.3 ) is described . The molecular compositions ( and thus the dielectric constants ) of the plasma polymers are controllable via changes in the plasma ...
... plasma polymerization technique to produce low dielectric constant materials ( k < 2.3 ) is described . The molecular compositions ( and thus the dielectric constants ) of the plasma polymers are controllable via changes in the plasma ...
Page 249
... plasma . Formation of these bonds is not observable in oxygen and O / NF , plasmas [ 6 ] . This fact supports our conclusion that the XPS and TOF SIMS data reflect fluorination of a thin surface layer of the polymers by residual ...
... plasma . Formation of these bonds is not observable in oxygen and O / NF , plasmas [ 6 ] . This fact supports our conclusion that the XPS and TOF SIMS data reflect fluorination of a thin surface layer of the polymers by residual ...
Page 348
... plasma generation chamber . The substrates employed in this study were B - doped p - type Si ( 100 ) wafers . The post plasma treatment of the SiOF films was carried out using O2 plasma in - situ at 300 ° C with various plasma power ...
... plasma generation chamber . The substrates employed in this study were B - doped p - type Si ( 100 ) wafers . The post plasma treatment of the SiOF films was carried out using O2 plasma in - situ at 300 ° C with various plasma power ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
41 other sections not shown
Other editions - View all
Common terms and phrases
1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines Microelectronics modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films