Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 248
... plasma afterglow with different ratio of O , and NF , in helium ( Matrix 303 ) . The second part of the experiments were carried out in high density plasma etching ... etching of vias . The etch characteristics were monitored by ...
... plasma afterglow with different ratio of O , and NF , in helium ( Matrix 303 ) . The second part of the experiments were carried out in high density plasma etching ... etching of vias . The etch characteristics were monitored by ...
Page 256
... plasma interaction with the films since a small amount of Si - F bonds were identified in the surface layer of the film after plasma ... etching . .Hydrogen - Silsesquioxane File 300 .Not Etched 250 2001 Intensity 256.
... plasma interaction with the films since a small amount of Si - F bonds were identified in the surface layer of the film after plasma ... etching . .Hydrogen - Silsesquioxane File 300 .Not Etched 250 2001 Intensity 256.
Page 257
... plasma etching , showing the presence of fluorine ( ca. 1.0 atomic % ) in the plasma etched surface . Intensity / Counts per second 2000 1800 16001 1400 Intensity / Counts per second 1200 1000 XPS Sp & Ls Hydrogen - Silsesquioxane Film ...
... plasma etching , showing the presence of fluorine ( ca. 1.0 atomic % ) in the plasma etched surface . Intensity / Counts per second 2000 1800 16001 1400 Intensity / Counts per second 1200 1000 XPS Sp & Ls Hydrogen - Silsesquioxane Film ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films