Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 278
... polished until the time mechanical grinding removes the passivated layer . The latter mechanism helps in reducing the topography on the surface [ 5 ] . The chemical phenomena occur at the metal surface , at the pad , and at the slurry ...
... polished until the time mechanical grinding removes the passivated layer . The latter mechanism helps in reducing the topography on the surface [ 5 ] . The chemical phenomena occur at the metal surface , at the pad , and at the slurry ...
Page 285
... polished for 10s in a slurry containing 0.5 vol % Triton - X , 0 5 vol % HNO3 ( 25 ) 0.1 % alumina ( 60nm ) abrasive , and water From Yang et al Where A is the area of the wafer surface and P is the applied load . By combining ( 3 ) and ...
... polished for 10s in a slurry containing 0.5 vol % Triton - X , 0 5 vol % HNO3 ( 25 ) 0.1 % alumina ( 60nm ) abrasive , and water From Yang et al Where A is the area of the wafer surface and P is the applied load . By combining ( 3 ) and ...
Page 287
... polished surface was excellent . Figure 6 compares the atomic force microscopic images of the as- deposited polymer , polymer polished in 60 vol . % glycerol slurry , and polished polymer after a short anneal 400 ° C . It is apparent ...
... polished surface was excellent . Figure 6 compares the atomic force microscopic images of the as- deposited polymer , polymer polished in 60 vol . % glycerol slurry , and polished polymer after a short anneal 400 ° C . It is apparent ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films