Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 87
смот PHASE SEPARATION BEHAVIORS OF POLYIMIDE BLENDS C.H. RYU , Y.C. BAE Department of Industrial Chemistry , Hanyang University , Seoul 133-791 Korea ycbae@email.hanyang.ac.kr ABSTRACT We investigated phase behaviors of polyimide blends ...
смот PHASE SEPARATION BEHAVIORS OF POLYIMIDE BLENDS C.H. RYU , Y.C. BAE Department of Industrial Chemistry , Hanyang University , Seoul 133-791 Korea ycbae@email.hanyang.ac.kr ABSTRACT We investigated phase behaviors of polyimide blends ...
Page 379
... polyimide is still present on the metal strip . The failure occurred cohesively in the polyimide underneath the AV / PI interface . Auger depth profile in Fig . 5 shows that the failure mode is also cohesive failure in the Cr / modified ...
... polyimide is still present on the metal strip . The failure occurred cohesively in the polyimide underneath the AV / PI interface . Auger depth profile in Fig . 5 shows that the failure mode is also cohesive failure in the Cr / modified ...
Page 382
... polyimide specimens were failed cohesively in the polyimide . Adhesion strength enhancement by RF plasma treatment is mainly attributed to the surface modification of polyimide surface facilitating bonding with the depositing Al atoms ...
... polyimide specimens were failed cohesively in the polyimide . Adhesion strength enhancement by RF plasma treatment is mainly attributed to the surface modification of polyimide surface facilitating bonding with the depositing Al atoms ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films