Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 175
... polymerization generated during curing and therefore proceed during curing at different rates . The crack driving force in an SSQ SOG film at room temperature derives from a residual tensile stress developed on cooling from the curing ...
... polymerization generated during curing and therefore proceed during curing at different rates . The crack driving force in an SSQ SOG film at room temperature derives from a residual tensile stress developed on cooling from the curing ...
Page 269
... polymerization of the discharge is increased . The reader is referred to Ref . [ 2 ] for a systematic set of experiments which clearly point out this trend . We limit the discussion here by stating that hydrogen and carbon in the ...
... polymerization of the discharge is increased . The reader is referred to Ref . [ 2 ] for a systematic set of experiments which clearly point out this trend . We limit the discussion here by stating that hydrogen and carbon in the ...
Page 297
... polymerization is occurring via the vinyl groups , while Auger spectra show that the polymerized films have compositions very similar to the starting precursors ; vinyltrichlorosilane ( VTCS ) or vinyltrimethylsilane ( VTMS ) . VTCS ...
... polymerization is occurring via the vinyl groups , while Auger spectra show that the polymerized films have compositions very similar to the starting precursors ; vinyltrichlorosilane ( VTCS ) or vinyltrimethylsilane ( VTMS ) . VTCS ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films