Low-dielectric Constant MaterialsMaterials Research Society, 1998 - Electric insulators and insulation |
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Page 72
... pore size observed for in 1b is < 200 Å while the photo of 1d shows very large , highly interconnected pores . Polymer loss from the MSSQ is verified using infrared spectroscopic studies . A sample containing a 30 % loading of polymer ...
... pore size observed for in 1b is < 200 Å while the photo of 1d shows very large , highly interconnected pores . Polymer loss from the MSSQ is verified using infrared spectroscopic studies . A sample containing a 30 % loading of polymer ...
Page 106
... pore size / size distribution and surface chemistry . The presence of pores with dimensions smaller than the mean free path of air is what yields breakdown voltages well above those expected for air and above the value of 2 MV / cm ...
... pore size / size distribution and surface chemistry . The presence of pores with dimensions smaller than the mean free path of air is what yields breakdown voltages well above those expected for air and above the value of 2 MV / cm ...
Page 108
PORE SIZE DISTRIBUTION One potential concern with the use of nanoporous silica in semiconductors is the presence of pores . For this application , two different pore - related problems exist . The first is that the average pore size ...
PORE SIZE DISTRIBUTION One potential concern with the use of nanoporous silica in semiconductors is the presence of pores . For this application , two different pore - related problems exist . The first is that the average pore size ...
Contents
Overview of Process Integration Issues for LowK Dielectrics | 3 |
Fundamental Aspects of Polymer Metallization | 15 |
LiquidPhase Deposition of LowK Organic | 27 |
Copyright | |
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1998 Materials Research a-C:F ILD adhesion aluminum annealing atoms birefringence bonds capacitance capacitors carbon chemical chemical vapor deposition cm¹ coefficient concentration copper crack velocity curing temperature damascene decrease density dielectric constant diffusion electrical electromigration electron ellipsometry energy etch rate film thickness FLAC fluorine fluorocarbon FTIR hard mask hydrogen in-plane increase integration interconnect interface joule heating layer low dielectric constant low k materials low-k Materials Research Society measured mechanical metal lines modulus moisture MSSQ nanoporous oxide oxygen PECVD Phys planarization plasma etching plasma treatment polyimide polymer polymer films polymerization porosity porous silica xerogel precursors Proc properties pulse ratio reaction refractive index resistance samples Semiconductor shown in Figure shows Si-F silica silicon silsesquioxane SiO2 SiOF films spectra spin-coating spin-on stress structure substrate surface Symp technique thermal stability thin films ULSI wafer wiring xerogel xerogel films